99 Search Results

The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphous materials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median T₁ (p =more » 0.002), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch after niobium deposition and etching also show ~ 33% lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS losses.« less

Magnetic dopants in three-dimensional topological insulators (TIs) offer a promising avenue for realizing the quantum anomalous Hall effect (QAHE) without the necessity for an external magnetic field. Understanding the relationship between site occupancy of magnetic dopant elements and their effect on macroscopic property is crucial for controlling the QAHE. By combining atomic-scale energy-dispersive X-ray spectroscopy (EDS) maps obtained by aberration-corrected scanning transmission electron microscopy (AC-STEM) and novel data processing methodologies, including semi-automatic lattice averaging and frame registration, we have determined the substitutional sites of Mn atoms within the 1.2% Mn-doped Sb₂Te₃ crystal. More importantly, the methodology developed in this studymore » extends beyond Mn-doped Sb₂Te₃ to other quantum materials, traditional semiconductors, and even electron irradiation sensitive materials.« less

Superconducting quantum bits (qubits) rely on ultra-thin, amorphous oxide tunneling barriers that can have significant inhomogeneities and defects as grown. This can result in relatively large uncertainties and deleterious effects in the circuits, limiting the scalability. Finding a robust solution to the junction reproducibility problem has been a long-standing goal in the field. Here, we demonstrate a transformational technique for controllably tuning the electrical properties of aluminum-oxide tunnel junctions. This is accomplished using a low-voltage, alternating-bias applied individually to the tunnel junctions, with which resistance tuning by more than 70% can be achieved. The data indicates an improvement of coherence andmore » reduction of two-level system defects. Transmission electron microscopy shows that the treated junctions are predominantly amorphous, albeit with a more uniform distribution of alumina coordination across the barrier. This technique is expected to be useful for other devices based on ionic amorphous materials.« less

Single-atom catalysis is a subcategory of heterogeneous catalysis with well-defined active sites. Numerous endeavors have been devoted to developing single-atom catalysts for industrially applicable catalysis, including the hydrogen evolution reaction (HER). High-current-density electrolyzers have been pursued for single-atom catalysts to increase active-site density and enhance mass transfer. Here, we reasoned that a single-atom metal embedded in nitrogen assembly carbon (NAC) catalysts with high single-atom density, large surface area, and ordered mesoporosity, could fulfil an industrially applicable HER. Among several different single-atom catalysts, the HER overpotential with the best performing Co-NAC reached a current density of 200 mA cm^-2 at 310more » mV, which is relevant to industrially applicable current density. Density functional theory (DFT) calculations suggested feasible hydrogen binding on single-atom Co resulted in the promising HER activity over Co-NAC. The best-performing Co-NAC showed robust performance under alkaline conditions at a current density of 50 mA cm^-2 for 20 h in an H-cell and at a current density of 150 mA cm^-2 for 100 h in a flow cell.« less

Dy-free sintered magnets were fabricated by blending Neo powder with different grain boundary diffusion alloy powders. Cu, CeAl and CeAlCu have a negative effect on H _cj of magnets, while PrAlCu and AlCuGa have a positive effect. The PrAlCu-added magnet achieves the best magnetic properties among all magnets with the additions of different diffusion alloys. With increasing PrAlCu from 0-10 wt.%, H cj of the magnets gradually increases from the original 14.5 kOe to 19.2 kOe. The magnet with 7.5 wt.% PrAlCu obtains a H _cj of 18 kOe and (BH) _max of 39.1 MGOe. It is found that Prmore » and Cu in PrAlCu alloy is mainly distributed at grain boundary and triple junctions, leading to a reduced coupling among grains, thus an enhanced H _cj. Here, the grain boundary engineering by adding an appropriate alloy is an effective method to improve H _cj of Dy-free NdFeB magnets.« less

Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T ₁ relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T ₁ relaxation timesmore » 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.« less

A new Co–Ni–N–C electrocatalyst for CO ₂ reduction, featuring diatomic metal-nitrogen sites on N-doped carbon, has been developed. It shows high CO yield and faradaic efficiency, promising for various electrochemical reactions.

GaN/ZnGeN ₂ /GaN double heterojunctions were grown by molecular beam epitaxy; we demonstrate coherent interfaces between ZnGeN ₂ and GaN and highlight defects and associated properties of interest with respect to optoelectronic applications.

Superconducting materials hold great potential for solid-state quantum computing. Their fabrication relies on established semiconductor fabrication techniques, such as thin film deposition and lithography, but the complex processing steps can result in defects at the qubits' interfaces and surfaces that can negatively impact coherence time. To improve superconducting qubit performance, it is essential to understand the structural features, at the atomic scale, that may act as sources of decoherence limiting factor in both the Josephson junction (JJ) and resonators, which are key components of superconducting qubit. This talk will present our recent studies on the microstructures in a 2D-transmon, withmore » an emphasis on the JJ. For this research, a combination of advanced microscopy techniques, including high-resolution (S)TEM imaging, and spectroscopy (EDS and EELS) are used to identify possible coherence-limiting defects or structural features.« less